半导体学报2021年第2期目次

半导体学报半导体学报

Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration

Guest Editors: Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li

J. Semicond. Volume 42, Number 2, February 2021

RESEARCH HIGHLIGHTS

Multidimensional perovskites enhance solar cell performance

Wenzhe Li, Jiandong Fan, Liming Ding

J. Semicond. 2021, 42(2): 020201

doi: 10.1088/1674-4926/42/2/020201

COMMENTS AND OPINIONS

Design technology co-optimization towards sub-3 nm technology nodes

Genquan Han, Yue Hao

J. Semicond. 2021, 42(2): 020301

doi: 10.1088/1674-4926/42/2/020301

SHORT COMMUNICATION

Inorganic perovskite/organic tandem solar cells with efficiency over 20%

Ling Liu, Zuo Xiao, Chuantian Zuo, Liming Ding

J. Semicond. 2021, 42(2): 020501

doi: 10.1088/1674-4926/42/2/020501

62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud

Dingyi Wu, Xiao Hu, Weizhong Li, Daigao Chen, Lei Wang, Xi Xiao

J. Semicond. 2021, 42(2): 020502

doi: 10.1088/1674-4926/42/2/020502

EDITORIAL

Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration

Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li

J. Semicond. 2021, 42(2): 020101

doi: 10.1088/1674-4926/42/2/020101

REVIEWS

Mobility enhancement techniques for Ge and GeSn MOSFETs

Ran Cheng, Zhuo Chen, Sicong Yuan, Mitsuru Takenaka, Shinichi Takagi, Genquan Han, Rui Zhang

J. Semicond. 2021, 42(2): 023101

doi: 10.1088/1674-4926/42/2/023101

The past and future of multi-gate field-effect transistors: Process challenges and reliability issues

Ying Sun, Xiao Yu, Rui Zhang, Bing Chen, Ran Cheng

J. Semicond. 2021, 42(2): 023102

doi: 10.1088/1674-4926/42/2/023102

Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics

Daquan Yang, Xiao Liu, Xiaogang Li, Bing Duan, Aiqiang Wang, Yunfeng Xiao

J. Semicond. 2021, 42(2): 023103

doi: 10.1088/1674-4926/42/2/023103

Towards electronic-photonic-converged thermo-optic feedback tuning

Min Tan, Kaixuan Ye, Da Ming, Yuhang Wang, Zhicheng Wang, Li Jin, Junbo Feng

J. Semicond. 2021, 42(2): 023104

doi: 10.1088/1674-4926/42/2/023104

A review: Photonics devices, architectures, and algorithms for optical neural computing

Shuiying Xiang, Yanan Han, Ziwei Song, Xingxing Guo, Yahui Zhang, Zhenxing Ren, Suhong Wang, Yuanting Ma, Weiwen Zou, Bowen Ma, Shaofu Xu, Jianji Dong, Hailong Zhou, Quansheng Ren, Tao Deng, Yan Liu, Genquan Han, Yue Hao

J. Semicond. 2021, 42(2): 023105

doi: 10.1088/1674-4926/42/2/023105

A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

Shuyu Bao, Yue Wang, Khaw Lina, Li Zhang, Bing Wang, Wardhana Aji Sasangka, Kenneth Eng Kian Lee, Soo Jin Chua, Jurgen Michel, Eugene Fitzgerald, Chuan Seng Tan, Kwang Hong Lee

J. Semicond. 2021, 42(2): 023106

doi: 10.1088/1674-4926/42/2/023106

ARTICLES

Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering

Zhaowu Tang, Chunsen Liu, Senfeng Zeng, Xiaohe Huang, Liwei Liu, Jiayi Li, Yugang Jiang, David Wei Zhang, Peng Zhou

J. Semicond. 2021, 42(2): 024101

doi: 10.1088/1674-4926/42/2/024101

The effect of γ-ray irradiation on the SOT magnetic films and Hall devices

Tengzhi Yang, Yan Cui, Yanru Li, Meiyin Yang, Jing Xu, Huiming He, Shiyu Wang, Jing Zhang, Jun Luo

J. Semicond. 2021, 42(2): 024102

doi: 10.1088/1674-4926/42/2/024102

Integration of GaN analog building blocks on p-GaN wafers for GaN ICs

Xiangdong Li, Karen Geens, Nooshin Amirifar, Ming Zhao, Shuzhen You, Niels Posthuma, Hu Liang, Guido Groeseneken, Stefaan Decoutere

J. Semicond. 2021, 42(2): 024103

doi: 10.1088/1674-4926/42/2/024103

目录推荐

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《半导体学报》是中国科学院主管、中国电子学会和中国科学院半导体研究所主办的学术刊物，1980年创刊，首任主编是王守武院士，黄昆先生撰写了创刊号首篇论文，2009年改为全英文刊Journal of Semiconductors（简称JOS），同年开始与IOPP英国物理学会出版社合作向全球发行。现任主编是中科院副院长、国科大校长李树深院士。2019年，JOS入选“中国科技期刊卓越行动计划”。2020年，JOS被EI收录。

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《半导体学报》在创刊四十年之际，启动实施 “中国半导体年度十大研究进展”的推荐和评选工作，记录我国半导体科学与技术研究领域的标志性成果。以我国科研院所、高校和企业等机构为第一署名单位，本年度公开发表的半导体领域研究成果均可参与评选。请推荐人或自荐人将研究成果的PDF文件发送至《半导体学报》电子邮箱：jos@semi.ac.cn，并附简要推荐理由。被推荐人须提供500字左右工作简介，阐述研究成果的学术价值和应用前景。年度十大研究进展将由评审专家委员会从候选推荐成果中投票产生，并于下一年度春节前公布。

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