SCMs文章合辑|忆阻器与人工突触器件

本文精选了Science China Materials近期发表的忆阻器与人工突触器件领域的代表性成果，介绍给读者。敬请关注！

基于结晶材料的柔性忆阻器的研究进展

Yang Li, Cheng Zhang, Zhiming Shi, Chunlan Ma, Jun Wang, Qichun Zhang

Science China Materials, 65(8), 2110-2127 (2022)

https://doi.org/10.1007/s40843-021-1771-5

基于低维材料的柔性神经形态电子器件

Tengyu Jin, Jing Gao, Yanan Wang, Wei Chen

Science China Materials, 65(8), 2154-2159 (2022)

https://doi.org/10.1007/s40843-021-1979-3

铁电突触器件及其应用的研究进展

Shaoan Yan, Junyi Zang, Pei Xu, Yingfang Zhu, Gang Li, Qilai Chen, Zhuojun Chen, Yan Zhang, Minghua Tang, Xuejun Zheng

https://doi.org/10.1007/s40843-022-2318-9

Native drift and Mott nanochannel in layered V₂O₅ film for synaptic and nociceptive simulation

层状V₂O₅薄膜中本征漂移和Mott纳米通道用于突触和痛觉感受器模拟

Wuhong Xue, Caihong Gao, Zheng Zhang, Tingting Han, Nan Hou, Wenhui Yin, Lei Shi, Xiaoling Wang, Gang Liu, Xiaohong Xu

Science China Materials, 66(2), 764-771 (2023)

https://doi.org/10.1007/s40843-022-2165-8

Controllable volatile-to-nonvolatile memristive switching in single-crystal lead-free double perovskite with ultralow switching electric field

具有超低开关电场的可控的易失性至非易失性单晶无铅双钙钛矿忆阻器

Qi You, Fu Huang, Feier Fang, Jiaqi Zhu, Yue Zheng, Shaofan Fang, Bo Zhou, Henan Li, Cheng Han, Yumeng Shi

Science China Materials, 66(1), 241-248 (2023)

https://doi.org/10.1007/s40843-022-2113-y

Intrinsically ionic conductive nanofibrils for ultra-thin bio-memristor with low operating voltage

基于本征离子导电的纳米微纤构筑低工作电压的超薄生物忆阻器

Yi Zhang, Suna Fan, Qianqian Niu, Fang Han, Yaopeng Zhang

Science China Materials, 65(11), 3096-3104 (2022)

https://doi.org/10.1007/s40843-022-2115-6

基于CsPbBr₃量子点/PDVT-10共轭聚合物杂化薄膜的光突触晶体管用于高效的神经形态计算

Congyong Wang, Qisheng Sun, Gang Peng, Yujie Yan, Xipeng Yu, Enlong Li, Rengjian Yu, Changsong Gao, Xiaotao Zhang, Shuming Duan, Huipeng Chen, Jishan Wu, Wenping Hu

Science China Materials, 65(11), 3077-3086 (2022)

https://doi.org/10.1007/s40843-022-2200-0

用于人工突触的染料敏化钙钛矿/有机半导体三元晶体管

Xin Wang, Dandan Hao, Jia Huang

Science China Materials, 65(9), 2521-2528 (2022)

https://doi.org/10.1007/s40843-021-1999-5

A light-emitting electrochemical artificial synapse with dual output of photoelectric signals

具有光电信号双输出的发光电化学人工突触

Huaan Zeng, Qizhen Chen, Liuting Shan, Yujie Yan, Changsong Gao, Wenjie Lu, Huipeng Chen, Tailiang Guo

Science China Materials, 65(9), 2511-2520 (2022)

https://doi.org/10.1007/s40843-021-2029-y

2H α-In₂Se₃铁电体中极序工程控制的光电流和多态存储器

Baohua Lv, Wuhong Xue, Zhi Yan, Ruilong Yang, Hao Wu, Peng Wang, Yuying Zhang, Jiani Hou, Wenguang Zhu, Xiaohong Xu

Science China Materials, 65(6), 1639-1645 (2022)

https://doi.org/10.1007/s40843-021-1920-9

CMOS兼容的晶圆级硅锥阵列局域化细丝形成以实现极佳阻变存储器均一性

Ying Zhang, Xiaolong Zhao, Xiaolan Ma, Yu Liu, Xuanze Zhou, Meiyun Zhang, Guangwei Xu, Shibing Long

Science China Materials, 65(6), 1623-1630 (2022)

https://doi.org/10.1007/s40843-021-1956-9

基于二维α-In₂Se₃忆阻器的突触可塑性和学习行为

Ying Zhao, Yifei Pei, Zichang Zhang, Xiaoyu Li, Jingjuan Wang, Lei Yan, Hui He, Zhenyu Zhou, Jianhui Zhao, Jingsheng Chen, Xiaobing Yan

Science China Materials, 65(6), 1631-1638 (2022)

https://doi.org/10.1007/s40843-021-1925-x

用于神经机器翻译的浮栅型PN共混光电突触晶体管

Xianghong Zhang, Enlong Li, Rengjian Yu, Lihua He, Weijie Yu, Huipeng Chen, Tailiang Guo

Science China Materials, 65(5), 1383-1390 (2022)

https://doi.org/10.1007/s40843-021-1901-2

海马体启发的与光照时长相关的记忆器件用于神经编码

Caihong Li, Wen Du, Hezhuang Liu, Mao Yang, Hao Xu, Jiang Wu, Zhiming Wang

Science China Materials, 65(4), 1087-1093 (2022)

https://doi.org/10.1007/s40843-021-1828-5

Cr₂Si₂Te₆铁磁半导体中大的正、负磁阻共存现象

Zhou Li, Wei Bai, Yuliang Li, Yuanlong Li, Sheng Wang, Weihui Zhang, Jiyin Zhao, Zhe Sun, Chong Xiao, Yi Xie

Science China Materials, 65(3), 780-787 (2022)

https://doi.org/10.1007/s40843-021-1765-x

Low-power memristors based on layered 2D SnSe/graphene materials

基于层状硒化锡/石墨烯材料的低功耗忆阻器件

Hong Wang, Tianqi Yu, Jianhui Zhao, Shufang Wang, Xiaobing Yan

Science China Materials, 64(8), 1989-1996 (2021)

https://doi.org/10.1007/s40843-020-1586-x

Artificial nociceptor based on TiO₂ nanosheet memristor

一种基于TiO₂纳米片忆阻器的人工伤害感受器

Jinling Lan, Gang Cao, Jingjuan Wang, Xiaobing Yan

Science China Materials, 64(7), 1703-1712 (2021)

https://doi.org/10.1007/s40843-020-1564-y

用于神经形态计算的具有可调功能的浮栅光敏突触晶体管

Lingkai Li, Xiao-Lin Wang, Junxiang Pei, Wen-Jun Liu, Xiaohan Wu, David Wei Zhang, Shi-Jin Ding

Science China Materials, 64(5), 1219-1229 (2021)

https://doi.org/10.1007/s40843-020-1534-2

在SrTiO₃/SrRuO₃异质结忆阻器件中实现电阻态高保持性

Ting-Ze Wang, Jian Xia, Rui Yang, Xiangshui Miao

Science China Materials, 66(3), 1141-1148 (2023)

https://doi.org/10.1007/s40843-022-2228-3

多阻态铁电HLO忆阻器及其在联想学习电路和人脸识别中的实现

Jiangzhen Niu, Ziliang Fang, Gongjie Liu, Zhen Zhao, Xiaobing Yan

Science China Materials, 66(3), 1149-1158 (2023)

https://doi.org/10.1007/s40843-022-2237-2

Ferroelectric-Hf_0.5Zr_0.5O₂ gated synaptic transistors with large conductance dynamic-range and multilevel states

具有大电导动态范围和多级电导态的铁电-Hf_0.5Zr_0.5O₂栅控突触晶体管

Chunlai Luo, Yan Zhang, Wentao Shuai, Kexin He, Ming Li, Ruiqiang Tao, Deyang Chen, Zhen Fan, Bin Zhang, Xiaoyuan Zhou, Jiyan Dai, Guofu Zhou, Xubing Lu, Junming Liu

https://doi.org/10.1007/s40843-022-2359-6

基于Mg/MgO阈值转变忆阻器的柔性生物可降解人工伤害感受器

Yaxiong Cao, Saisai Wang, Rui Wang, Yuhan Xin, Yaqian Peng, Jing Sun, Mei Yang, Xiaohua Ma, Ling Lv, Hong Wang, Yue Hao

https://doi.org/10.1007/s40843-022-2292-7

基于Ge-Ga-Sb介质的全相变脉冲神经网络的设计

Jun Lin, Xianliang Mai, Dayou Zhang, Kuan Wang, Huan Wang, Yi Li, Hao Tong, Yuhui He, Ming Xu, Xiangshui Miao

https://doi.org/10.1007/s40843-022-2283-9

利用界面工程来调控铁电隧道忆阻器的生物突触行为

Jianhui Zhao, Tianqi Yu, Yiduo Shao, Rui Guo, Weinan Lin, Gongjie Liu, Zhenyu Zhou, YiFei Pei, Jingjuan Wang, Kaixuan Sun, Xiaobing Yan, Jingsheng Chen

https://doi.org/10.1007/s40843-022-2275-7

A general strategy for flexible synaptic transistors with high mechanical stability

制造具有高机械稳定性的柔性突触晶体管的一般策略

Bingyong Zhuang, Xiumei Wang, Chuanbin An, Congyong Wang, Lujian Liu, Huipeng Chen, Tailiang Guo, Wenping Hu

https://doi.org/10.1007/s40843-022-2408-7

2D-3D perovskite memristor with low energy consumption and high stability for neural morphology calculation

用于神经形态学计算的低能耗、高稳定性2D-3D钙钛矿忆阻器

Kaixuan Sun, Qingrui Wang, Long Zhou, Jingjuan Wang, Jingjing Chang, Rui Guo, Beng Kang Tay, Xiaobing Yan

https://doi.org/10.1007/s40843-022-2317-0

Light-/steam-driven polymeric crosslinking with porous multistructure pattern for ultrastable and fast-speed memory

光/蒸气协同构建交联多孔聚合物复合结构基超稳定高速阻变存储器

Chaoyi Ban, Yuhang Yin, Xu Luo, Zhengdong Liu, Kang Chen, Minghua Tang, Xuemei Dong, Dengfeng Zhang, Zifan Li, Yueyue Wu, Juqing Liu, Wei Huang

https://doi.org/10.1007/s40843-022-2350-7

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