【JMAT特刊征稿】低维集成光电材料与器件
好消息，好消息！2023年Journal of Materiomics将推出特刊——Low-dimensional Integrated Opto-Electronic Materials and Devices，现面向广大学者征集相关稿件啦！投稿截止日期：2022年9月30日。虚拟专刊将于2023年6月发表。
Special issue on
Low-dimensional Integrated Opto-Electronic Materials and Devices
Summary and Scope
Low-dimensional (LD) materials and devices are the backbones of new generation optoelectronic circuitries and systems with higher integration capacity and better performance. Entering the post-Moore era, silicon (Si)-based electronic transistor technology is confronted with increasing short-channel and energy consumption bottlenecks. In response to this challenge, novel LD optoelectronic materials with exotic photo- and electro-physical effects are on augmenting demand to both expand the functionality and promote the efficiency of integrated information devices. Low-dimensional semiconductors (from 0D-2D) have evinced great potential to achieve this goal. The epitaxy/solution-grown quantum dots represent as excellent quantum sources for single-photon emission and future quantum information processing. Endowed with the naturally formed 1D waveguide structure, semiconductor nanowires have been manifested as excellent nano-lasers and photodetectors, with emission and photo-response spanning from the ultra-violet (UV) to the mid-infrared (mid-IR) range. Furthermore, the van der Waals-layered semiconductors, emerging over the last decade, have exhibited great competitiveness in atomically thin 2D transistors, light-emitting devices, and photo-detectors with spin-valley-entangled optoelectronic characteristics. Given the vast choice of nanomaterials, more fascinating fundamental physics and device applications can be uncovered by integrating these LD materials in hybrid device architectures. Further in-depth research on device integration via established Si-based CMOS technology will enable novel integrated opto-electronic chip systems. In light of this, comprehensive and systematic research efforts are invoked to thoroughly understand the subject matter and further advance this research field.
低维材料和器件是新一代光电子电路和系统的重要支柱，为更高集成容量和更好性能等提供有力支撑。随着后摩尔时代的到来，基于硅的晶体管技术面临着越来越严重的短沟道效应和能耗瓶颈。为应对这一挑战，具有特殊光电物理效应的新型低维光电材料的需求不断增加，以同时扩大集成信息的功能性和效率。低维半导体结构材料在实现这一目标方面具有巨大的潜力。基于外延/溶液法制备的量子点单光子源已成为未来量子信息处理的优秀光源。具有自然形成的一维波导结构，半导体纳米线已被制备成优秀的纳米激光器和光电探测器，其发射和光响应范围可覆盖紫外到中红外波段。此外，在过去十年中出现的范德华层状半导体在原子级厚度晶体管、发光器件，以及在具有自旋谷耦合光电特性的光电探测器方面显示出巨大的竞争力。鉴于低微纳米材料的丰富选择，通过将这些低维材料集成到混合器件架构，我们期待发现更多迷人的基础物理和器件应用。鉴于纳米材料的丰富选择，通过将这些低维材料集成到混合器件架构中，可以发现更多迷人的基础物理和器件应用。进一步研究器件集成中的关键科学与技术问题，有望基于硅基CMOS工艺实现新型多功能片上光电集成系统。因此，全面且系统的研究相关工作，并深入理解相关研究领域是及其必要的。
The Journal of Materiomics (JMAT) , indexed in SCI (Impact Factor of 8.589) and Scopus (Citescore of 9.6), is a leading academic journal that publishes cutting-edge research in the general field of materials science, particularly systematic studies of the relationships among composition, processing, structure, property, and performance of advanced materials. The journal is going to publish a special issue on the topic of low-dimensional integrated opto-electronic materials and devices in 2023.
Journal of Materiomics（JMAT）被SCI（影响因子为8.589）和Scopus（Cite评分为9.6）收录，该刊引领材料学科发展前沿，注重报道以材料设计、制备、表征及应用技术为主线的系统性前沿研究成果，将在2023年出版低维集成光电材料与设备专刊。
The topics that the special issue will include, but not be limited to:
Integrated LD material growth, synthesis and fabrication;
低维半导体材料的可控生长、合成和制造；
Photo-and electro-physics of integrated LD semiconductor heterostructures;
低维半导体异质结构的光电物理学；
Integrated LD optoelectronic devices, including LEDs, lasers, modulators, and photodetectors;
低维半导体集成光电器件，包括LED、激光器、调制器和光电探测器；
New concept of LD information system, including brain-inspired neuromorphic devices and on-chip systems.
低维材料集成信息系统的新概念，包括脑神经形态装置、片上系统等。
Submission Guideline
Authors should prepare their manuscripts following the online submission page of Journal of Materiomics at http://www.journals.elsevier.com/journal-of-materiomics. All manuscripts will be peer-reviewed according to the journal reviewing procedures.
Important Dates
Manuscript submission due date: September 30, 2022; Publication date before June 30, 2023
Guest Editors
Prof.
Anlian Pan
College of Materials Science and Engineering, Hunan University, China
E-mail: anlian.pan@hnu.edu.cn
Department of Electronics and Nanoengineering, Aalto University, Finland
E-mail: zhipei.sun@aalto.fi
Prof.
Zhipei Sun
Prof.
Jian-Bin Xu
Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, China
E-mail: jbxu@ee.cuhk.edu.hk
Institute of Applied Physics and Materials Engineering, University of Macau, China
E-mail: gcxing@um.edu.mo
Prof.
Guichuan Xing
Prof.
Xiangfeng Duan
Department of Chemistry and Biochemistry, University of California, Los Angeles, USA
E-mail: xduan@chem.ucla.edu
欢迎大家积极投稿，一展您的风采！
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