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FITEE“新型存储器系统设计与应用研究”专题征稿通知

张广艳,郑纬民等 信息与电子工程前沿FITEE 2022-10-29
《信息与电子工程前沿(英文)》(FITEE)

“新型存储器系统设计与应用研究”专题

征稿通知
(2022年10月15日截稿)

存储系统作为整个计算机系统的核心子系统,对人工智能、大数据、云计算、物联网等国家战略新兴产业的可持续发展具有至关重要的影响。随着处理器和网络设备这二者的性能不断提升,存储栈访问成为制约数据密集型计算系统性能的主要因素。近年来,以支持块寻址的闪存设备、支持字节寻址的NVRAM、存算一体化设备以及大容量光存储等为代表的新型存储器,因为有望突破“存储墙”问题而受到广泛关注。为了满足大数据存储系统中高吞吐量、低访问延迟、高数据可靠性等需求,未来的存储系统迫切需要在算法创新、软件设计与硬件适配等方面不断创新发展,以解决更大规模、更高性能和更复杂的系统结构等挑战,并掌握相关系统的研发和应用等方面的新经验,加速推动大数据分析的发展。

为解决大数据计算中的存储墙问题,提高我国在存储领域的自主可控能力,加强我国在相关领域的研究先进性与应用广泛性,为未来新型存储器系统领域的发展和创新提供先进理论和应用成果,中国工程院院刊《信息与电子工程前沿(英文)》(FITEE邀请郑纬民院士担任主编,筹备“新型存储器系统设计与应用研究”专题。专题将围绕(但不限于)以下主题征稿:

  • 新型存储器及系统

  • 新型存储架构

  • 智能存储系统

  • 数据删冗与压缩

  • 大规模纠删码存储

  • 基于新型存储的数据库

  • 大数据


欢迎综述(Review Article)、研究(Research Article)、观点(Perspective)等类型稿件。为推动国际合作,特别鼓励中国学者与国外学者合作撰稿。


专题编委会
主编:
郑纬民教授,中国工程院院士,清华大学
执行主编:
张广艳副教授,清华大学,国家杰出青年科学基金获得者
编委(按姓氏字母序):
冯丹教授,华中科技大学,长江学者
李克勤教授,纽约州立大学,IEEE Fellow

邵子力教授,香港中文大学

肖侬教授,中山大学,长江学者

熊劲研究员,中科院计算所

联系方式:

张广艳,清华大学

邮箱:gyzh@tsinghua.edu.cn

FITEE编辑部
邮箱:jzus_zzy@zju.edu.cn
电话:+86-571-88273162

投稿要求、期刊简介、重要日程等,请见下方Call for Papers
欢迎国内外相关领域专家、学者踊跃投稿!


FITEE Special Feature on

Design and Application of New Storage Systems

Call for Papers
(Submission by Oct. 15, 2022)

As the core of a computer system, the storage system plays an important role in the sustainable development of emerging strategic industries, such as artificial intelligence (AI), big data, cloud computing, and the Internet of Things (IoT). With increase in the performance of processors and network devices, storage stack access becomes one of the major factors restricting the performance of data-intensive systems. In recent years, new storage devices, such as block-addressable flash memory, byte-addressable NVRAM, in-memory computing devices, and large-capacity optical storage, have attracted wide attention as they are expected to break the “memory wall.” To satisfy the requirements of large storage systems with high throughput, low access latency, and high data reliability, future storage systems urgently require constant innovation in algorithms, software designs, hardware adaptions, and so on. It can help address challenges in building larger-scale and higher-performance systems with more complex structures. It can also enrich the experience in building and applying relevant systems, and accelerate the development of big data processing.

To address the “memory wall” problem, improve our independence in storage techniques, enhance academic advancement and application breadth of our country in relevant areas, and provide advanced theory and application for the development and innovation of new storage systems in the future, Frontiers of Information Technology & Electronic Engineering (FITEE for short) invites Prof. Weimin Zheng, an academician of the Chinese Academy of Engineering, as the Editor-in-Chief to organize this special feature on “design and application of new storage systems.” 


Topics of interest include (but are not limited to):
  • New storage devices and systems

  • New storage architectures

  • Smart storage systems

  • Data deduplication and compression

  • Large-scale erasure coded (EC) storage

  • Database on top of new storage devices

  • Big data analysis


We are interested in review and research articles, perspective, and other types of articles. To promote international cooperation, we encourage submissions that are co-authored by domestic and international researchers.


Editorial Board:

Editor-in-Chief:

Prof. Weimin Zheng, Academician of CAE, Tsinghua University, China

Executive Lead Editor:

Prof. Guangyan Zhang, Tsinghua University, China

Editors (in alphabetical order of last names):

Prof. Dan Feng, Huazhong University of Science and Technology, China

Prof. Keqin Li, State University of New York, USA

Prof. Zili Shao, Chinese University of Hong Kong, China

Prof. Nong Xiao, Sun Yat-Sen University, China

Prof. Jin Xiong, Institute of Computing Technology, Chinese Academy, China


Important Dates:
Manuscript submission by Oct. 15, 2022
Acceptance notification by Jan. 15, 2023
Online publication: April, 2023

Submission Instructions:

All submitted manuscripts must be written in English and must not be under consideration elsewhere for publication. Guidelines for authors are available at http://www.jzus.zju.edu.cn/manuscript.php. Either Word or LaTeX format is acceptable. When Word is used, the layout of the text should be in single column, 1.5 line spacing, 10.5 pt font size, and Times New Roman font. A template is available at  http://www.jzus.zju.edu.cn/download/FITEE_LaTex_template.zip. Manuscripts should be submitted via http://www.editorialmanager. com/zusc/ under the article type “S.I. - Storage.


Introduction to FITEE:
FITEE is an international peer-reviewed journal launched by the Chinese Academy of Engineering (CAE) and Zhejiang University, co-published by Springer & Zhejiang University Press, and indexed by SCI-E (IF=2.161, 2020 JCR). FITEE aims to publish the latest implementation of applications, principles, and algorithms in the broad area of Electrical and Electronic Engineering. All articles will undergo international peer review and crosscheck processes before they are accepted to ensure high quality.

Contact:

For inquiries regarding this special issue, please contact:

Guangyan Zhang

Tsinghua University, China

E-mail: gyzh@tsinghua.edu.cn

FITEE Editorial Office

Ziyang Zhai (Managing Editor)

E-mail: jzus_zzy@zju.edu.cn

Tel: +86-571-88273162

 




关于本刊


Frontiers of Information Technology & Electronic Engineering(简称FITEE,中文名《信息与电子工程前沿(英文)》,ISSN 2095-9184,CN 33-1389/TP)是信息电子类综合性英文学术月刊,SCI-E、EI收录,最新影响因子2.161,位于JCR Q2分区。前身为2010年创办的《浙江大学学报英文版C辑:计算机与电子》,2015年更为现名,现为中国工程院信息与电子工程领域分刊。覆盖计算机、信息与通信、控制、电子、光学等领域。文章类型包括研究论文、综述、个人视点、评述等。现任主编为中国工程院院士潘云鹤、卢锡城。实行国际同行评审制,初次转达意见一般在2~3个月内。文章一经录用将快速在线。

2019年,荣获中国科协等七部委推出的中国科技期刊卓越行动计划项目资助(梯队期刊)。2021~2022年,先后入选信息通信领域(中国通信学会组织评选)和计算领域(中国计算机学会组织评选)高质量科技期刊分级目录,均被列为最高的T1级别。


官网http://www.jzus.zju.edu.cn

期刊Springer主页

http://www.springer.com/computer/journal/11714

在线投稿

http://www.editorialmanager.com/zusc


更多信息,请见:

2021最新影响因子公布 FITEE首次突破2.0

FITEE影响因子提升55%,首次跨入Q2区

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