郭鸿--McGill University, Montreal, Canada

题目：Realizing High Current Sub-60 mV/ decade Switching in FETs by Gapped “Cold” Source

报告人： 郭鸿

单位：McGill University, Montreal, Canada

报告地点：秦皇岛

报告时间：2018年6月26日-30日

报告摘要

Abstract Achieving sub-60 mV/decade FET switching is critical for reducing power dissipation in integrated circuits. Here we propose and theoretically investigate steep slope switching made possible by a cold source suppresses hot electrons at the thermal tail of the Fermi distribution. We show sub-60 mV/decade switching with: (i) using gapless/ gapped graphene as injection source, (ii) introducing a band gap in the source of Si FET.  The feasibility and design of the cold source are investigated by first principles on different metals, pocket doping and disorder.

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