论文导读｜Perspective of Loss Mechanisms for Silicon and Wide……
Published in
Volume: 2, Issue: 2, 2017
Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices
With the commercial availability of GaN and SiC-based power semiconductor devices having significantly improved material characteristics, there is a need to discuss the perspective of the underlying physical loss mechanisms of these devices versus their silicon counterparts. This article will compare latest generation Superjunction power transistors versus e-mode GaN HEMTs and SiC MOSFETs in terms of semiconductor losses and their potential for further improvement. A short application section will give practical information on best matching circuits for each device concept.
Gerald Deboy
Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria
Oliver Haeberlen
Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria
Michael Treu
Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria
GaN HEMT, loss mechanisms, power semiconductor devices, Superjunction, wide bandgap devices
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