Optoelectronics based on 2D TMDs and heterostructures
2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS2, WS2 and WSe2 phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon.
Cite this article：Nengjie Huo, Yujue Yang and Jingbo Li. Optoelectronics based on 2D TMDs and heterostructures. Journal of Semiconductors, 2017, 38(3): 031002
Fig. 1. (a, b) Schematic diagram of graphene and TMDs (MoS2 or WS2), respectively. (c, d) Optical microscopy images of exfoliated WSe2 and CVD grown MoS2, respectively. The scale bar is 10 μm.