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Recent progress in synthesis of two-dimensional hexagonal BN

H L Wang et al. 半导体学报

Two-dimensional (2D) materials have recently received a great deal of attention due to their unique structures and fascinating properties, as well as their potential applications. 2D hexagonal boron nitride (2D h-BN), an insulator with excellent thermal stability, chemical inertness, and unique electronic and optical properties, and a band gap of 5.97 eV, is considered to be an ideal candidate for integration with other 2D materials. Nevertheless, the controllable growth of high-quality 2D h-BN is still a great challenge. A comprehensive overview of the progress that has been made in the synthesis of 2D h-BN is presented, highlighting the advantages and disadvantages of various synthesis approaches. In addition, the electronic, optical, thermal, and mechanical properties, heterostructures, and related applications of 2D h-BN are discussed.


通信作者张兴旺,中国科学院半导体研究所,Email:xwzhang@semi.ac.cn

Cite this articleHaolin Wang, Yajuan Zhao, Yong Xie, Xiaohua Ma and Xingwang Zhang. Recent progress in synthesis of two-dimensional hexagonal boron nitride. Journal of Semiconductors, 2017, 38(3): 031003

Fig. 11. (e) Typical SEM images of h-BN grains grown on Cu-Ni alloy foils with 15 atom % Ni.


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