Recent progress in synthesis of two-dimensional hexagonal BN

Two-dimensional (2D) materials have recently received a great deal of attention due to their unique structures and fascinating properties, as well as their potential applications. 2D hexagonal boron nitride (2D h-BN), an insulator with excellent thermal stability, chemical inertness, and unique electronic and optical properties, and a band gap of 5.97 eV, is considered to be an ideal candidate for integration with other 2D materials. Nevertheless, the controllable growth of high-quality 2D h-BN is still a great challenge. A comprehensive overview of the progress that has been made in the synthesis of 2D h-BN is presented, highlighting the advantages and disadvantages of various synthesis approaches. In addition, the electronic, optical, thermal, and mechanical properties, heterostructures, and related applications of 2D h-BN are discussed.

通信作者：张兴旺，中国科学院半导体研究所，Email：[e-mail]

Cite this article：Haolin Wang, Yajuan Zhao, Yong Xie, Xiaohua Ma and Xingwang Zhang. Recent progress in synthesis of two-dimensional hexagonal boron nitride. Journal of Semiconductors, 2017, 38(3): 031003

Fig. 11. (e) Typical SEM images of h-BN grains grown on Cu-Ni alloy foils with 15 atom % Ni.

点击下方“阅读原文”可查看原文