Carbon-doping-induced negative differential resistance in......
By using a combined method of density functional theory and non-equilibrium Green's function formalism, we investigate the electronic transport properties of carbon-doped armchair phosphorene nanoribbons (APNRs). The results show that C atom doping can strongly affect the electronic transport properties of the APNR and change it from semiconductor to metal. Meanwhile, obvious negative differential resistance (NDR) behaviors are obtained by tuning the doping position and concentration. In particular, with reducing doping concentration, NDR peak position can enter into mV bias range. These results provide a theoretical support to design the related nanodevice by tuning the doping position and concentration in the APNRs.
通信作者：夏从新，河南师范大学，Email：xiacongxin@htu.edu.cn
Cite this article：Caixia Guo, Congxin Xia, Tianxing Wang and Yufang Liu. Carbon-doping-induced negative differential resistance in armchair phosphorene nanoribbons. Journal of Semiconductors, 2017, 38(3): 033005
Fig. 3. Calculated I-V curves for systems (a) pristine APNR, (b) S1C and (c) S1E.
点击下方“阅读原文”可查看原文