Photoresponsive field-effect transistors based on multilayer....

2D SnS₂ nanosheets are exfoliated by micromechanical exfoliation technique from SnS₂ single crystals which are synthesized by CVT methods. Monolayer SnS₂ nanosheet has been obtained and the Raman spectrum shows that A_1g mode of monolayer SnS₂ shows a slight softening compared with bulk SnS₂ single crystal. The field effect transistors (FETs) based on multilayer SnS₂ nanosheets have been fabricated, of which the electrical and photoelectrical properties have been measured. Under dark condition, with V_sd of 1 V, our SnS₂ FET shows n-type behavior. The carrier mobility of the FETs reach 3.51 cm²V^-1s^-1 and the ‘ON/OFF’ ratio is about 5×10². The SnS₂ FET is also illuminated under 532 nm laser with the power of 500 mW/cm². The light absorption causes an increment of carrier mobility (from 3.51 cm²V^-1s^-1 under dark condition to 3.85 cm²V^-1s^-1 under 532 nm laser illumination with the power of 500 mW/cm²) of SnS₂. The responsivity (R) and detectivity of our multilayer device under 500 mW/cm² 532 nm is 2.08 A/W and 6×10⁶ J, respectively. All the above properties indicate the potential of SnS₂ nanosheets to be used as FETs and phototransistors.

通信作者：王岩，中国科学院半导体研究所，Email：[e-mail]

Cite this article：Yan Wang, Le Huang and Zhongming Wei. Photoresponsive field-effect transistors based on multilayer SnS₂ nanosheets. Journal of Semiconductors, 2017, 38(3): 034001

Fig. 3. (a) Schematic diagram of SnS₂ transistor device and the typical measurement setup. (b) I-V (I_sd-V_sd) curve of the transistor, which indicates the Ohmic contact between the SnS₂ nanosheet and the Au electrode. Inset of (b) is the optical image of multilayers SnS₂ device, the nanosheet thickness of which is about 16 nm from AFM result. (c) Transfer (I_sd-V_g) and (d) output (I_sd-V_sd) characteristics of SnS₂ transistor.

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