Enhancement of photodetection based on perovskite/MoS2 hybrid...

Perovskite/MoS₂ hybrid thin film transistor photodetectors consist of few-layered MoS₂ and CH₃NH₃PbI₃ film with various thickness prepared by two-step vacuum deposition. By implementing perovskite CH₃NH₃PbI₃ film onto the MoS₂ flake, the perovskite/MoS₂ hybrid photodetector exhibited a photoresponsivity of 10⁴A/W and fast response time of about 40 ms. Improvement of photodetection performance is attributed to the balance between light absorption in the perovskite layer and an effective transfer of photogenerated carriers from perovskite entering the MoS₂ channel. This work may provide guidance to develop high-performance hybrid structure optoelectronic devices.

通信作者：江潮，国家纳米科学中心，Email：[e-mail]；

                  王公堂，山东师范大学，Email：[e-mail] 

Cite this article：Fengjing Liu, Jiawei Wang, Liang Wang, Xiaoyong Cai, Chao Jiang and Gongtang Wang. Enhancement of photodetection based on perovskite/MoS₂ hybrid thin film transistor. Journal of Semiconductors, 2017, 38(3): 034002

Fig. 1. (a) Schematic of the perovskite/MoS₂ photodetector. The molecular structures of the MoS₂ and perovskite are also shown. (b) Optical images of a fabricated MoS₂ FET device and perovskite/MoS₂ hybrid photodetector, with perovskite stacking on the MoS₂ FET. The AFM image of the MoS₂ FET channel is also shown.

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