半导体学报2018年39卷6期——Si基材料与器件专刊

Special Issue on Si-Based Materials and Devices

Si基材料与器件专刊

因其优异的性质，以硅为基础的集成电路的发展一直备受关注。然而随集成度的提高及器件尺寸的缩小，量子限制效应及功耗问题凸显，摩尔定律发展受到了很大挑战。未来，以光取代电作为传输介质实现片内及片间光电互连成为一个新的发展趋势。而硅基光源则成为限制未来片内光电互连的关键并成为近期研究的热点。

针对该热点领域，《半导体学报》组织了一期“Si基材料与器件”专刊，并邀请中央民族大学李传波教授、华中科技大学夏金松教授和南京大学余林蔚教授共同担任特约编辑。该专刊已于2018年第6期正式出版并可在线阅读，欢迎关注。

本专刊收录了9篇邀请综述论文及1篇原创论文，报道了Si基SiGe、Ge、GeSn材料及器件、纳米硅的发光及其应用、基于石墨的硅光子学集成芯片以及硅基光子学中的新兴技术等方向的最新进展。

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Invited review papers

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Emerging technologies in Si active photonics

Xiaoxin Wang  and Jifeng Liu

2018 J. Semicond. 39 061001

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Carrier transport mechanisms in semiconductor nanostructures and devices

M. A. Rafiq

2018 J. Semicond. 39 061002

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Dopant atoms as quantum components in silicon nanoscale devices

Xiaosong Zhao, Weihua Han, Hao Wang, Liuhong Ma, Xiaoming Li, Wang Zhang, Wei Yan and Fuhua Yang

2018 J. Semicond. 39 061003

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Controllable growth of GeSi nanostructures by molecular beam epitaxy

Yingjie Ma, Tong Zhou, Zhenyang Zhong, and Zuimin Jiang

2018 J. Semicond. 39 061004

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Research progress of Ge on insulator grown by rapid melting growth

Zhi Liu, Juanjuan Wen, Chuanbo Li, Chunlai Xue, and Buwen Cheng

2018 J. Semicond. 39 061005

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Recent progress in GeSn growth and GeSn-based photonic devices

Jun Zheng, Zhi Liu, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang

2018 J. Semicond. 39 061006

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Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

Peng Lu, Dongke Li, Yunqing Cao, Jun Xu, and Kunji Chen

2018 J. Semicond. 39 061007

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Light-emitting diodes based on colloidal silicon quantum dots

Shuangyi Zhao, Xiangkai Liu, Xiaodong Pi, and Deren Yang

2018 J. Semicond. 39 061008

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Silicon-graphene photonic devices 

Yanlong Yin, Jiang Li, Yang Xu, Hon K i Tsang, and Daoxin Dai

2018 J. Semicond. 39 061009

Papers

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Ammonia sensing using arrays of silicon nanowires and graphene

K. Fobelets, C. Panteli, O. Sydor uk, and Chuanbo Li

2018 J. Semicond. 39 063001

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