半导体学报2020年第3期目次

J. Semicond. Volume 41, Number 3, March 2020

RESEARCH HIGHLIGHTS

Observation of exciton polariton condensation in a perovskite lattice at room temperature

Jun Zhang

J. Semicond. 2020, 41(3): 030201

doi: 10.1088/1674-4926/41/3/030201

ARTICLES

Epitaxial graphene gas sensors on SiC substrate with high sensitivity

Cui Yu, Qingbin Liu, Zezhao He, Xuedong Gao, Enxiu Wu, Jianchao Guo, Chuangjie Zhou,Zhihong Feng

J. Semicond. 2020, 41(3): 032101

doi: 10.1088/1674-4926/41/3/032101

Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

Lin Luo, Jun Liu, Guofang Wang, Yuxing Wu

J. Semicond. 2020, 41(3): 032102

doi: 10.1088/1674-4926/41/3/032102

Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes

S. J. Mukhopadhyay, Prajukta Mukherjee, Aritra Acharyya, Monojit Mitra

J. Semicond. 2020, 41(3): 032103

doi: 10.1088/1674-4926/41/3/032103

First-principles exploration of defect-pairs in GaN

He Li, Menglin Huang, Shiyou Chen

J. Semicond. 2020, 41(3): 032104

doi: 10.1088/1674-4926/41/3/032104

High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots

Feifan Xu, Xu Cen, Bin Liu, Danbei Wang, Tao Tao, Ting Zhi, Qi Wang, Zili Xie, Yugang Zhou,Youdou Zheng, Rong Zhang

J. Semicond. 2020, 41(3): 032301

doi: 10.1088/1674-4926/41/3/032301

Fabrication of flexible AlGaInP LED

Qiaoli Liu, Yajie Feng, Huijun Tian, Xiaoying He, Anqi Hu, Xia Guo

J. Semicond. 2020, 41(3): 032302

doi: 10.1088/1674-4926/41/3/032302

Enhancement of photocatalytic activity by femtosecond-laser induced periodic surface structures of Si

P. Satapathy, A. Pfuch, R. Grunwald, S. K. Das

J. Semicond. 2020, 41(3): 032303

doi: 10.1088/1674-4926/41/3/032303

35 km amplifier-less four-level pulse amplitude modulation signals enabled by a 23 GHz ultrabroadband directly modulated laser

Yaoping Xiao, Yu Liu, Yiming Zhang, Haotian Bao, Ninghua Zhu

J. Semicond. 2020, 41(3): 032304

doi: 10.1088/1674-4926/41/3/032304

Analysis of the time domain characteristics of tapered semiconductor lasers

Desheng Zeng, Li Zhong, Suping Liu, Xiaoyu Ma

J. Semicond. 2020, 41(3): 032305

doi: 10.1088/1674-4926/41/3/032305

Simulation analysis of a high efficiency GaInP/Si multijunction solar cell

M. Benaicha, L. Dehimi, F. Pezzimenti, F. Bouzid

J. Semicond. 2020, 41(3): 032701

doi: 10.1088/1674-4926/41/3/032701

High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

Zhanqiang Ren, Qingmin Li, Bo Li, Kechang Song

J. Semicond. 2020, 41(3): 032901

doi: 10.1088/1674-4926/41/3/032901

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