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【学术视频】ICFSI-17 | 耶拿大学Friedhelm Bechstedt

KouShare 蔻享学术 2021-04-25

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 | Friedhelm Bechstedt

题   目:Validity of Anderson rule for interfaces between 2D semiconductors

报告Friedhelm Bechstedt

单   位:Friedrich-Schiller-Universität Jena

时   间:2019-06-25

地   点:上海交通大学

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报告提纲

  • coincidence lattice method reasonable bilayer stackings
  • very different gaps type Ⅰ
    similar (but not too small) gaps type Ⅱ
  • similar (but not too large) gaps band state hybridization despite vdW interaction
    violation of Anderson rule
  • tuning of heterostructure type by electric fied due to polarization effects

个人简介

Prof. Bechstedt é um dos pesquisadores mais ativos da atualidade (com  mais de 15.000 citações, índice h: 63) com a pesquisa focada especialmente no cálculo de excitações em sistemas de matéria condensada, como óxidos transparentes semicondutores e sistemas bidimensionais relacionados ao grafeno.

会议简介

The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17) was held in Shanghai. This 17th conference of the ICFSI series, started in 1985 by G. Le Lay, has the intention, as all previous meetings, to give a broadband overview over the latest developments of modern phenomena at surfaces, interfaces, and nanostructures based on semiconductors or insulators ranging from the characterization at the atomic scale to prospects of electronic, spintronic, photonic and photovoltaic applications. The aim for this conference is to bring together leading experts from various fields and disciplines in order to stimulate the exchange of knowledge and promote the capabilities of this interdisciplinary research topic.

Organizer: Shanghai Jiaotong University, Kavli Institute for Theoretical Sciences, Chinese Academy of Sciences


—— ——往期精彩回顾—— ——【学术视频】ICFSI-17 | Jun Nakamura of UEC: Bi-layer formation of water on graphene【学术视频】ICFSI-17 | 复旦大学张远波教授:Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi₂Te₄【学术视频】ICFSI-17 | Thierry ANGOT of Aix-Marseille University: Epitaxial graphene and silicene【学术视频】ICFSI-17 | 中国科大张振宇教授:Atomistic Growth Mechanisms & Property Optimization of 2D Materials

【学术视频】ICFSI-17 | 中科院物理研究所杜世萱研究员:Electronic-Structure Engineering of Graphene by Semiconductor Intercalation


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