【学术视频】2019国际半导体前沿论坛 | 北京计算科学研究中心魏苏淮教授

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图 | 魏苏淮

题   目：Theoretical study of defect control in wide band gap semiconductors报告人：魏苏淮单   位：北京计算科学研究中心时   间：2019-10-13地   点：中国科学院半导体研究所

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报告摘要

First-principles electronic structure calculations can provide deep physical understanding on the defect properties of wbg semiconductors and provide guidelines on overcoming doping limit in WBG semiconductors. It has now become a vital tool for accelerating scientific discovery of new WBG semiconductors.

个人简介

Professor Su-Huai Wei is a Professor at the Beijing Computational Science Research Center (CSRC). He is a Fellow of both the American Physical Society and The Materials Research Society. He received his B.S. in Physics from Fudan University in 1981 and Ph.D. from the College of William and Mary in 1985. He joined the Solar Energy Research Institute (it is now National Renewable Energy Laboratory) in 1985 as a postdoctoral researcher and later became Staff Scientist, Senior Scientist, Principal Scientist, Manager of the Theoretical Materials Science Group, and he joined the CSRC in 2015. 

会议简介

International Semiconductor Frontier Forum (ISFF) 2019 is the first time for the Institute of Semiconductors CAS and the Journal of Semiconductors to jointly organize this annual conference. This year's conference brings together over 200 high-ranking guests from around the world. ISFF 2019 aims to provide a valuable opportunity for engineers and researchers to communicate their latest works and related breaking progress in Semiconductor Technology. 

Conference Themes:

1) Physics, Materials, and Devices of Conventional Semiconductors;

2) Organic and Perovskite Semiconductors Based Optoelectronic Devices;

3) Optoelectronic Devices and Integration;

4) Microelectronic Devices and (Integrated) Circuits;

5) Semiconductor Spintronics; 6) Flexible Electronics;

7) Semiconductors and New Energy;

8) Wide Bandgap Semiconductors;

9) Semiconductor Quantum Devices and Physics;

10) Two-Dimensional Materials and Related Physics and Devices. 

 (The topics include but not limited to these.) 

《半导体学报》是中国科学院主管、中国电子学会和中国科学院半导体研究所主办的学术刊物，1980年创刊，首任主编是王守武院士，黄昆先生撰写了创刊号首篇论文，2009年改为全英文月刊Journal of Semiconductors（简称JOS），同年开始与IOPP英国物理学会出版社合作向全球发行。现任主编是李树深院士。

JOS定位于具有国际影响力的半导体科技领域旗帜性期刊，报道内容覆盖半导体物理、材料、器件、工艺和集成电路，发文方向包括但不限于：传统半导体相关理论、材料与器件；有机及钙钛矿半导体光电器件；半导体光电子器件及集成；微电子器件与集成电路；半导体自旋电子学；柔性电子学；半导体新能源；宽禁带半导体；半导体量子物理与器件；二维材料及器件物理。

JOS始终坚持办刊宗旨，面向国际半导体科学与技术前沿，及时报道半导体科技领域最新成果和进展，国际影响力不断提升，经过40年的发展，JOS已成为我国半导体科学与技术和相关领域最重要的学术传播和交流平台。

半导体学报公众号

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