【直播】【“半语-益言”系列讲座】Quantum optics based on hBN materials
本系列讲座由《半导体学报》主办,于2021年9月8日19:30开始。授权蔻享学术进行网络直播。
主 题:Quantum optics based on hBN materials
主讲人:Dr. Mehran Kianinia (University of Technology Sydney, Australia)
主持人:刘文静 研究员(北京大学)
时 间:2021年9月8日 19:30-21:00
主办方:《半导体学报》
赞助单位:凌云光技术股份有限公司
报告摘要
Solid state quantum light sources are emerging as promising candidates for many applications in quantum technologies. Among these sources, optically active point defects in hexagonal boron nitride (hBN) are attracting considerable attention due to their extreme brightness, and high Debye Waller factor which means the majority of the photons are emitted into the zero-phonon line (ZPL). For practical quantum photonic applications, where photon interference and generations of indistinguishable photons are required, it is important to characterize the coherent properties of the emitted photons. Specifically, studies of dephasing mechanisms, coherence and line broadening effects underpin the applicability of quantum emitters for photon interference experiments. On the other hand, optically addressable spin defects in wide band gap materials are highly sought after the realization of quantum devices and scalable quantum communication technologies. Tremendous effort has been made to engineer, characterize and control spin defects in solid-state host such as nitrogen vacancy and silicon vacancy centres in diamond, di-vacancy in silicon carbide and Yb ions in yttrium orthovanadate. In this presentation, I will give an overview of the recent progress we made on quantum emitters in hBN. First, I will present spectroscopy of hBN defects at cryogenic temperature to study dephasing mechanism of these emitters in details. And then I will introduce spin bearing defect in hBN, namely negatively charged boron vacancies and demonstrate deterministic generation of these defects using high energy ion beam as well as their peculiar photoluminescence properties.报告人介绍
“半语-益言”系列讲座简介
《半导体学报》是中国科学院主管、中国电子学会和中国科学院半导体研究所主办的学术刊物,1980年创刊,首任主编是王守武院士,黄昆先生撰写了创刊号首篇论文,现任主编是中科院副院长、国科大校长李树深院士。2009年改为全英文月刊Journal of Semiconductors(简称JOS),同年开始与IOP英国物理学会出版社合作向全球发行。2019年入选科协”中国科技期刊卓越行动计划”。2020年,JOS被EI收录。
近年来,《半导体学报》进行了一系列改革,在创刊四十年之际,2020年启动实施 “中国半导体年度十大研究进展”的推荐和评选工作;创建了JOSarXiv预发布平台,JOSarXiv致力于为国内外半导体领域科研人员提供中英文科技论文免费发布和获取的平台;针对半导体领域热点研究方向,组织多期系列专刊进行系统性、专业性介绍,为半导体领域科研工作者学术研究提供参考。经过一系列改革措施,《半导体学报》论文质量、行业影响力和论文引用率稳步提升,得到了国内外科研人员的大力支持和认可。
半导体集成电路和光电子芯片产业作为信息技术产业的核心,是支撑经济社会发展和保障国家安全的战略性、基础性和先导性产业。近年来,随着国内外形势的快速变化发展,无论是半导体科研人员还是普通民众都对半导体芯片技术与产业的发展非常关注,期望我国能够尽快构建安全、自主、可控的半导体芯片研发与产业生态体系,早日摆脱受制于人的被动局面。
《半导体学报》举办"半语-益言"系列讲座,希望通过系列讲座普及半导体科学基础知识和前沿发展动态(即“半语”),让更多人了解半导体的内涵与外延并从中获得有用的知识(即“益言”),共同推动我国半导体科技与产业的发展。
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