【学术视频】第九届量子能源国际研讨会 | 美国伦斯勒理工学院张绳百教授

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图 | 张绳百

题   目：Semiconductors in the 2D limit: from topological insulator to excitonic insulator报告人：张绳百单   位：Rensselaer Polytechnic Institute时   间：2019-10-21地   点：厦门

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报告摘要

I will discuss possible forms of ordinary semiconductors such as GaAs in their two-dimensional (2D) limit. It appears that, regardless the commonly-observed bulk form, a universal van der Waals (vdW) stacking may take place when the film thickness is below a critical thickness. Interestingly, such a vdW stacking can also lead to non-trivial topological properties, as in the case of GaAs. Moreover, the 2D GaAs may become an excitonic insulator with a characteristic exciton binding energy (E_b) larger than the band gap (E_g). More strikingly, in some of the strongly-correlated 2D systems, e.g., MX2 where M = Ni, Co and X = Cl, Br, half excitonic insulator can happen where one spin channel remains to be an ordinary semiconductor whereas the other spin channel will be an excitonic insulator.

个人简介

Professor Shengbai Zhang received his Ph.D. in Physics from the University of California at Berkeley in 1989 under the supervision of Professor Marvin L. Cohen. Professor Zhang then joined Xerox PARC in Palo Alto California where he performed postdoctoral research with Dr. Jim Chadi and Dr. John Northrup. In 1991 he moved to the National Renewable Energy Laboratory (NREL) in Golden Colorado and became group leader for Computational Materials Science in 2005. In 2008 he was appointed Senior Kodosky Constellation Chair at Rensselaer Polytechnic Institute in Troy NY.Professor zhang has a broad theoretical research background in computational materials physics which covers a range of inorganic and organic semiconductors and solids for bulk properties defect structures and surface physics. His most recent work involves earch-abundant photovoltaic materials phase change memory materials vander Waals interaction in organic semiconductors lithium battery materials hydrogen storage topological insulators graphene and excited state dynamics. Professor Zhang has more than 309 peer-reviewed publications with more than 19000 citations.He has been a Fellow of the American Physical Society since 2001.

会议简介

由中国科学技术大学合肥微尺度物质科学国家研究中心国际功能材料量子设计中心（ICQD）和复旦大学主办、厦门大学承办的第九届量子能源国际研讨会，于2019年10月21日至23日在福建厦门召开。量子能源研讨会已成功地举办了八届，其初衷是邀请已有的和每年新增加的国家自然基金委员会能源领域重点项目团队，以解决能源问题为目标，围绕“量子能源”领域的重大科学问题，结合最前沿的理论与实验研究进展，进行深入的学术交流与讨论。随着中国科学技术大学“新型能源材料的量子设计创新引智基地”（简称“111计划”）的获批，从第四届开始会议扩大了规模，也包括“111计划”的海内外成员。

—— ——往期精彩回顾—— ——●【学术视频】第九届量子能源国际研讨会 | 美国犹他大学刘锋教授：Excited quantum Hall effect: enantiomorphic flat bands in a Yin-Yang kagome lattice●【学术视频】ICFSI-17 | 中科院物理研究所杜世萱研究员：Electronic-Structure Engineering of Graphene by Semiconductor Intercalation●【学术视频】第二届ICQD青年科学家论坛 | 上海大学任伟教授：二维材料的电子结构计算和物性调控●【学术视频】2019微纳科技与产业国际论坛 | 欧洲科学院李保文院士：热二级管/晶体管和热超材料：热能调控的艺术●【学术视频】机器学习-计算化学Workshop | 复旦大学刘智攀教授：Global optimization based Neural Network Potential and Reaction Prediction Artificial Intelligence●【学术视频】第一届量子算法与软件国际研讨会 | 中科院计算技术研究所孙晓明研究员：Optimal Space-Depth Trade-Off of CNOT Circuits●【学术视频】第13届全国分子束外延学术会议 | 清华大学郝智彪教授：氮化物纳米线量子点分子束外延与特性研究

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